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january 2009 rev 1 1/15 15 stf7n95k3 stp7n95k3, STW7N95K3 n-channel 950 v, 1.1 ? , 7.2 a, to-220, to-220fp, to-247 zener-protected supermesh3? power mosfet features 100% avalanche tested extremely large avalanche performance gate charge minimized very low intrinsic capacitances zener-protected application switching applications description the new supermesh3? series is obtained through the combination of a further fine tuning of st's well established strip-based powermesh? layout with a new optimized vertical structure. in addition to pushing on-resistance significantly down, special attention has been taken to ensure a very good dynamic performances coupled with a very large avalanche capability for the most demanding application. figure 1. internal schematic diagram type v dss r ds(on) max i d pw stf7n95k3 950 v < 1.35 ? 7.2 a 35 w stp7n95k3 950 v < 1.35 ? 7.2 a 150 w STW7N95K3 950 v < 1.35 ? 7.2 a 150 w 1 2 3 to-220 to-220fp to-247 1 2 3 1 2 3 table 1. device summary order codes marking package packaging stf7n95k3 7n95k3 to-220fp tube stp7n95k3 7n95k3 to-220 tube STW7N95K3 7n95k3 to-247 tube www.st.com
contents stf7n95k3, stp7n95k3, STW7N95K3 2/15 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
stf7n95k3, stp7n95k3, STW7N95K3 electrical ratings 3/15 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220, to-247 to-220fp v gs gate-source voltage 30 v i d drain current (continuous) at t c = 25 c 7.2 7.2 (1) 1. limited by package a i d drain current (continuous) at t c = 100 c 4.5 4.5 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 28.8 28.8 (1) a p tot total dissipation at t c = 25 c 150 35 w i ar max current during repetitive or single pulse avalanche (pulse width limited by t jmax ) 9a e as single pulse avalanche energy (3) 3. starting t j = 25 c, i d = i ar , v dd = 50 v 220 mj derating factor 1.12 0.24 w/c dv/dt (4) 4. i sd 7.2 a, di/dt = 100 a/s, v peak < v (br)dss peak diode recovery voltage slope 6 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s;t c =25 c) 2000 v t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal data symbol parameter to-220 to-247 to-220fp unit r thj-case thermal resistance junction-case max 0.83 3.57 c/w rt hj-amb thermal resistance junction-ambient max 62.5 50 62.5 c/w t l maximum lead temperature for soldering purpose 300 c
electrical characteristics stf7n9 5k3, stp7n95k3, STW7N95K3 4/15 2 electrical characteristics (tcase = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 950 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c =125 c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 4 5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 3.6 a 1.1 1.35 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5% forward transconductance v ds = 15 v, i d = 3.6 a 5 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 100 v, f = 1 mhz, v gs = 0 1031 79 0.9 pf pf pf c o(tr) (2) 2. c oss eq. time related is defined as a constant equival ent capacitance giving the sa me charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v ds = 0 to 760 v, v gs = 0 60 pf c o(er) (3) 3. c oss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related v ds = 0 to 760 v, v gs = 0 36 pf r g gate input resistance f=1 mhz gate dc bias=0 test signal level = 20 mv open drain 2.4 ? q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 760 v, i d = 7.2 a, v gs = 10 v (see figure 20 ) 34 6 20 nc nc nc
stf7n95k3, stp7n95k3, STW7N95K3 electrical characteristics 5/15 table 6. switching times symbol parameter test conditions min. typ. max unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 475 v, i d = 3.6 a, r g = 4.7 ?, v gs = 10 v (see figure 19 ) 14 9 36 23 ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) 7.2 28.8 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 7.2 a, v gs = 0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 7.2 a, di/dt = 100a/s v dd = 60 v (see figure 24 ) 450 6 28 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 7.2 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 24 ) 550 8 28 ns c a table 8. gate-source zener diode symbol parameter test conditions min. typ. max. unit bv gso (1) 1. the built-in back-to-back zener diodes have specif ically been designed to enhanc e not only the device?s esd capability, but also to make th em safely absorb possible voltage tr ansients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protec t the device?s integrity. these int egrated zener diodes thus avoid the usage of external components gate-source breakdown voltage igs= 1ma (open drain) 30 v
electrical characteristics stf7n9 5k3, stp7n95k3, STW7N95K3 6/15 2.1 electrical characteristi cs (curves) figure 2. safe operating area for to-220 figure 3. thermal impedance for to-220 figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp figure 6. safe operating area for to-247 figure 7. thermal impedance for to-247 i d 100 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am01576v1 i d 10 1 0.1 0.01 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am01577v1 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am0157 8 v1
stf7n95k3, stp7n95k3, STW7N95K3 electrical characteristics 7/15 figure 8. output characteristics figure 9. transfer characteristics figure 10. normalized b vdss vs temperature figure 11. static drain-source on resistance figure 12. gate charge vs gate-source voltage figure 13. capacitance variations i d 6 4 2 0 0 10 v d s (v) 25 (a) 8 10 5v 6v 7v v g s =10v 12 5 15 20 am01579v1 i d 6 4 2 0 0 4 v g s (v) 8 (a) 2 6 10 8 1 3 5 7 9 v d s =15v am015 8 0v1 bv d ss -50 0 t j (c) (norm) 50 100 0.70 0. 8 0 0.90 1.00 1.10 am015 8 1v1 r d s (on) 1. 3 1.2 1.1 1.0 1.5 2.5 i d (a) ( ? ) 2 3 1.4 i d = 3 .6 a v g s =10 v 4 3 .5 4.5 5 am015 8 6v1 v g s 6 4 2 0 0 10 q g (nc) (v) 40 8 20 3 0 10 v dd =760 v v g s =10 v i d =7.2 a 12 100 200 3 00 400 500 600 700 0 am015 83 v1 c 100 10 1 0.1 0.1 10 v d s (v) (pf) 1 1000 100 ci ss co ss cr ss am015 8 4v1
electrical characteristics stf7n9 5k3, stp7n95k3, STW7N95K3 8/15 figure 14. output capacitance stored ener gy figure 15. normalized on resistance vs temperature figure 16. source-drain diode forward characteristics figure 17. normalized gate threshold voltage vs temperature figure 18. maximum avalanche energy vs temperature e co ss 6 4 2 0 0 v d s (v) ( j) 400 8 200 10 12 600 14 8 00 am0 3 244v1 r d s (on) 1.5 1.0 0.5 0 -50 0 t j (c) (norm) 50 100 2.0 2.5 3 .0 am015 8 2v1 v s d 1 3 i s d (a) (v) 2 6 4 5 0.5 0.6 0.7 0. 8 0.9 7 8 t j =-50c t j =25c t j =150c am015 8 7v1 v g s (th) 0.7 0.6 0.5 0.4 -50 0 t j (c) (norm) 0. 8 50 100 150 1.1 1.0 0.9 1.2 am015 8 5v1 e a s 0 40 t j (c) (mj) 20 100 60 8 0 0 20 40 60 8 0 120 140 100 120 140 160 1 8 0 200 220 i d =9 a am015 88 v1
stf7n95k3, stp7n95k3, STW7N95K3 test circuits 9/15 3 test circuits figure 19. switching times test circuit for resistive load figure 20. gate charge test circuit figure 21. test circuit for inductive load switching and diode recovery times figure 22. unclamped inductive load test circuit figure 23. unclamped inductive waveform figure 24. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
package mechanical data stf7n95k3, stp7n95k3, STW7N95K3 10/15 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack? packages, depending on their level of environmental compliance. ecopack? specifications, grade definitions and product status are available at: www.st.com. ecopack? is an st trademark.
stf7n95k3, stp7n95k3, STW7N95K3 package mechanical data 11/15 to-220 mechanical data dim mm inch min typ max min typ max a 4.40 4.60 0.17 3 0.1 8 1 b 0.61 0. 88 0.024 0.0 3 4 b 1 1.14 1.70 0.044 0.066 c0.4 9 0.70 0.01 9 0.027 d 15.25 15.75 0.6 0.62 d1 1.27 0.050 e 10 10.40 0. 393 0.40 9 e 2.40 2.70 0.0 9 4 0.106 e1 4. 9 5 5.15 0.1 9 4 0.202 f1.2 3 1. 3 2 0.04 8 0.051 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.0 9 4 0.107 l1 3 14 0.511 0.551 l1 3 .50 3 . 93 0.1 3 7 0.154 l20 16.40 0.645 l 3 02 8 . 9 0 1.1 3 7 ? p 3 .75 3 . 8 5 0.147 0.151 q2.65 2. 9 5 0.104 0.116
package mechanical data stf7n95k3, stp7n95k3, STW7N95K3 12/15 dim. mm . x a m . p y t . n i m 6 . 4 4 . 4 a 7 . 2 5 . 2 b 5 7 . 2 5 . 2 d 7 . 0 5 4 . 0 e 1 5 7 . 0 f 0 7 . 1 5 1 . 1 1 f 5 . 1 5 1 . 1 2 f 2 . 5 5 9 . 4 g 7 . 2 4 . 2 1 g 4 . 0 1 0 1 h 6 1 2 l 6 . 0 3 6 . 8 2 3 l 6 . 0 1 8 . 9 4 l 6 . 3 9 . 2 5 l 4 . 6 1 9 . 5 1 6 l 3 . 9 9 7 l 2 . 3 3 a i d 7012510_rev_j a b h di a l7 d e l6 l5 l2 l 3 l4 f1 f2 f g g1 to-220fp mechanical data
stf7n95k3, stp7n95k3, STW7N95K3 package mechanical data 13/15 dim. mm. min. typ max. a4. 8 55.15 a1 2.20 2.60 b 1.0 1.40 b 1 2.0 2.40 b 2 3 .0 3 .40 c0.40 0. 8 0 d1 9 . 8 5 20.15 e 15.45 15.75 e5.45 l 14.20 14. 8 0 l1 3 .70 4. 3 0 l2 1 8 .50 ?p 3 .55 3 .65 ?r 4.50 5.50 s 5.50 to-247 mechanical data
revision history stf7n95k3, stp7n95k3, STW7N95K3 14/15 5 revision history table 9. document revision history date revision changes 27-jan-2009 1 first release
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